A GaAs low-high doped MESFET MMIC power amplifierfor CDMA/AMPS dual-mode cellular telephone
- 26 September 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (20) , 1928-1929
- https://doi.org/10.1049/el:19961280
Abstract
An MMIC power amplifier using low-high doped GaAs MESFETs (LH-MESFETs) has been developed for a CDMA/AMPS dual mode cellular telephone. It is fully integrated on one chip (2.5 × 2.9 mm2) including all matching circuits. For CDMA operation at frequency of 836.5 MHz, an efficiency of 25%, adjacent channel leakage power of –29 dBc at 885 kHz, and –48 dBc at 1980 kHz were obtamed with an output power of 27.25 dBm and Vdd = 4.7 V. In AMPS operation, 30.5 dBm output power was obtained with 27.5 dB gain and 47% efficiency. The experimental results show that the gate periphery of LH-MESFETs and size of MMIC are much smaller than in previously reported similar amplifiers using conventional MESFET technology. This MMIC power amplifier is suitable for dual mode cellular applications.Keywords
This publication has 1 reference indexed in Scilit:
- 3.3 V operation GaAs power MESFETs with 65%power-added efficiency for hand-held telephonesElectronics Letters, 1994