3.3 V operation GaAs power MESFETs with 65%power-added efficiency for hand-held telephones
- 29 April 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (9) , 739-740
- https://doi.org/10.1049/el:19940477
Abstract
High-low doped metal semiconductor field effect transistors (MESFETs) operating at a drain bias of 3.3 V have been developed. The MESFETs with 0.6 µm gate length and 12 mm gate width show a maximum drain current density of 310 mA/mm and a uniform transconductance of around 112 mS, ranging from Vgs = –1.8 V to 0.5 V. The device tested at 3.3 V drain bias and 900 MHz demonstrates an output power of 30.9 dBm with associate power-added-efficiency of 65% for an input power of 20 dBm.Keywords
This publication has 2 references indexed in Scilit:
- A 3.5V, 1.3W GaAs power multichip IC for cellular phonePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatmentJournal of Applied Physics, 1993