Improvement of breakdown characteristics of a GaAs power field-effect transistor using (NH4)2Sx treatment
Open Access
- 1 April 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 73 (7) , 3539-3542
- https://doi.org/10.1063/1.352931
Abstract
A (NH4)2Sx solution treatment technique was applied to a GaAs metal‐semiconductor field‐effect transistor (MESFET) to improve the electrical properties of the transistor. The gate leakage current of the MESFET remarkably decreased while the drain breakdown voltage doubled to 30 V with the (NH4)2Sx treatment. The (NH4)2Sx treatment was found to effectively suppress the formation of donor‐type defects at the GaAs surface and to increase the Schottky barrier height.This publication has 13 references indexed in Scilit:
- Synchrotron radiation photoemission analysis for (NH4)2Sx-treated GaAsJournal of Applied Physics, 1991
- Evidence for the passivation effect in (NH4)2Sx-treated GaAs observed by slow positronsApplied Physics Letters, 1991
- The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron BeamJapanese Journal of Applied Physics, 1991
- Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bondsApplied Physics Letters, 1989
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx TreatmentJapanese Journal of Applied Physics, 1988
- Drain avalanche breakdown in gallium arsenide MESFET'sIEEE Transactions on Electron Devices, 1988
- Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAsJapanese Journal of Applied Physics, 1988
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InPPhysical Review B, 1978