The Effect of Surface Oxides on the Creation of Point Defects in GaAs Studied by Slow Positron Beam
- 1 February 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (2A) , L138
- https://doi.org/10.1143/jjap.30.l138
Abstract
The depth distributions of the positron annihilation in as-etched GaAs before and after the air exposure were characterized by a slow positron beams. The characteristic value of S parameter at near-surface region is decreased after the air exposure of the etched-GaAs, which indicates that the thin oxide layer is formed on the fresh surface of the etched GaAs during the air exposure. It is found that the mean diffusion length of positrons is not changed after the as-etched GaAs was exposed to air atmosphere. This implies that the trapping centers for a positron are not created below the surface by the chemisorption of oxygen atoms.Keywords
This publication has 16 references indexed in Scilit:
- Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Photoemission study of the band bending and chemistry of sodium sulfide on GaAs (100)Applied Physics Letters, 1989
- A Model to Explain the Effective Passivation of the GaAs Surface by (NH4)2Sx TreatmentJapanese Journal of Applied Physics, 1988
- Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAsJapanese Journal of Applied Physics, 1988
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- A study of agglomeration and release processes of helium implanted in nickel by a variable energy positron beamJournal of Nuclear Materials, 1985
- Defect Structures below the Surface in Metals Investigated by Monoenergetic PositronsPhysical Review Letters, 1982
- New and unified model for Schottky barrier and III–V insulator interface states formationJournal of Vacuum Science and Technology, 1979