Reduction of Dislocation Density in Impurity-Doped GaAs Grown on Si Substrate by Molecular Beam Epitaxy
- 1 June 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (6A) , L860
- https://doi.org/10.1143/jjap.29.l860
Abstract
The addition of impurities such as Be and Si during the epitaxial growth of GaAs on Si substrate by molecular beam epitaxy caused the reduction of dislocation density. This was demonstrated by the depth distribution of vacancy-type defects obtained from slow positron measurements and by etch pit observation. The slow positron beam results indicate that impurities, Si and Be, increase concentrations of Ga vacancies and interstitials in the grown GaAs, respectively. The results suggest that these defects assist the enhanced dislocation climb, resulting in the reduction of dislocation density in impurity-doped GaAs.Keywords
This publication has 15 references indexed in Scilit:
- Impurity Doping Effect on the Dislocation Density in GaAs on Si (100) Grown by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1989
- A Study of Vacancy-Type Defects in B+-Implanted SiO2/Si by a Slow Positron BeamJapanese Journal of Applied Physics, 1989
- Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained-layer superlatticesApplied Physics Letters, 1989
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Stages in the recovery of deformed single crystals of iron studied by position annihilation techniquesMaterials Science and Engineering, 1986
- Detection of Ga vacancies in electron irradiated GaAs by positronsApplied Physics Letters, 1986
- Formation of gallium interstitials during zinc diffusion into gallium arsenidePhilosophical Magazine A, 1981
- Effect of doping and thermal vacancies on positron annihilation in semiconductorsApplied Physics B Laser and Optics, 1979