Defect reduction effects in GaAs on Si substrates by thermal annealing
- 5 December 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (23) , 2293-2295
- https://doi.org/10.1063/1.100257
Abstract
High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed.Keywords
This publication has 6 references indexed in Scilit:
- Crosshatch patterns in GaAs films on Si substrates due to thermal strain in annealing processesApplied Physics Letters, 1987
- Reduction of Dislocation Density in GaAs/Si by Strained-Layer Superlattice of InxGa1-xAs-GaAsyP1-yJapanese Journal of Applied Physics, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Dislocation Velocities in GaAsJapanese Journal of Applied Physics, 1977