Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD
- 1 November 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (11A) , L843
- https://doi.org/10.1143/jjap.23.l843
Abstract
Single domain GaAs layers with satisfactory morphology were grown on (100)-oriented Si substrates by heat treatment of the substrates at above 900°C and subsecquent two-step growth at low temperatures of 450°C or below and by conventional growth temperatures. The grown GaAs layers showed a high mobility of 5200 cm2V-1s-1 at room temperature with a carrier density of 1×1016 cm-3.Keywords
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