Metal-Dependent Schottky Barrier Height with the (NH4)2Sx-Treated GaAs
- 1 November 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (11A) , L2125
- https://doi.org/10.1143/jjap.27.l2125
Abstract
Schottky barriers have been prepared on (NH4)2Sx-treated GaAs. The barrier height was observed to change remarkably with the kind of metals, which is predicted in the case of low interface state density. We found that the interface trap density was reduced to 9.8×1012 cm-2·eV-1 by the treatment from 6.5×1013 cm-2·eV-1 for the untreated one.Keywords
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