Schottky barrier formation on (NH4)2S-treated n- and p-type (100)GaAs
- 4 July 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (1) , 66-68
- https://doi.org/10.1063/1.100572
Abstract
Because of a large surface state density, which effectively pins the Fermi level at the surface, metals with vastly different work functions and chemistry produce very similar Schottky barriers when deposited on GaAs. We have investigated the effects of an (NH4)2S surface treatment on the formation of Schottky barriers on n‐ and p‐type GaAs. Samples which have undergone the (NH4)2S treatment show a reduced pinning of the Fermi level at the surface and hence Schottky barriers which are more sensitive to the metal work function.Keywords
This publication has 12 references indexed in Scilit:
- Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowthApplied Physics Letters, 1988
- Effects of passivating ionic films on the photoluminescence properties of GaAsApplied Physics Letters, 1987
- Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wellsApplied Physics Letters, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- Schottky-barrier height of ideal metal contacts to GaAsApplied Physics Letters, 1984
- Double-implanted GaAs complementary JFET'sIEEE Electron Device Letters, 1984
- Monocrystalline aluminium ohmic contact to n-GaAs by H2S adsorptionApplied Physics Letters, 1981
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Fermi Level Position at Metal-Semiconductor InterfacesPhysical Review B, 1964