Effects of Na2S and (NH4)2S edge passivation treatments on the dark current-voltage characteristics of GaAs p n diodes
Open Access
- 20 June 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (25) , 2157-2159
- https://doi.org/10.1063/1.99563
Abstract
We have investigated the dark current‐voltage characteristics of GaAs pn homojunctions whose surfaces have been passivated with Na2S and (NH4)2S chemical treatments. Reductions in 2kT perimeter recombination currents by a factor of 3.2 were obtained for the two treatments. A shunt leakage, observed at low forward bias for the Na2S treated devices, is virtually eliminated with the (NH4)2S treatment. It is also shown that even the high quality, large area (0.25 cm2) pn diodes used in this study are dominated by 2kT edge currents before passivation.Keywords
This publication has 6 references indexed in Scilit:
- Near-ideal transport in an AlGaAs/GaAs heterostructure bipolar transistor by Na2S⋅9H2O regrowthApplied Physics Letters, 1988
- Effects of passivating ionic films on the photoluminescence properties of GaAsApplied Physics Letters, 1987
- Electric field dependent exciton energy and photoluminescence quenching in GaInAs/InP quantum wellsApplied Physics Letters, 1987
- Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivationApplied Physics Letters, 1987
- A thermal-generation-limited buried-well structure for room-temperature GaAs dynamic RAM'sIEEE Electron Device Letters, 1987
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986