Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

This publication has 16 references indexed in Scilit:

• AlN and GaN epitaxial heterojunctions on 6H–SiC(0001): Valence band offsets and polarization fields
  Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
• In x Ga 1−x N/GaN band offsets as inferred from the deep, yellow-red emission band in InxGa1−xN
  Applied Physics Letters, 1999
• Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
  Materials Science and Engineering: B, 1999
• Optical band gap in Ga1−xInxN (0<x<0.2) on GaN by photoreflection spectroscopy
  Applied Physics Letters, 1998
• Reduction of oscillator strength due to piezoelectric fields in ${\mathrm{G}\mathrm{a}\mathrm{N}/\mathrm{A}\mathrm{l}}_x{\mathrm{Ga}}_{1-x}\mathrm{N}$ quantum wells
  Physical Review B, 1998
• Spontaneous polarization and piezoelectric constants of III-V nitrides
  Physical Review B, 1997
• Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
  Japanese Journal of Applied Physics, 1997
• Valence band splittings and band offsets of AlN, GaN, and InN
  Applied Physics Letters, 1996
• Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy
  Applied Physics Letters, 1996
• Determination of the GaN/AlN band offset via the (-/0) acceptor level of iron
  Applied Physics Letters, 1994