Carrier confinement in GaInN/AlGaN/GaN quantum wells with asymmetric barriers: direction of the piezoelectric field
- 6 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 59 (1-3) , 315-318
- https://doi.org/10.1016/s0921-5107(98)00361-4
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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