High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
- 1 March 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (3B) , L309-312
- https://doi.org/10.1143/jjap.37.l309
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer SuperlatticesJapanese Journal of Applied Physics, 1997
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Defect structure in selectively grown GaN films with low threading dislocation densityApplied Physics Letters, 1997
- Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiCElectronics Letters, 1997
- Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structureApplied Physics Letters, 1997
- Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasersIEEE Journal of Quantum Electronics, 1997
- Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVDMRS Internet Journal of Nitride Semiconductor Research, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992