InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
- 1 December 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (12A) , L1568
- https://doi.org/10.1143/jjap.36.l1568
Abstract
InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 h under continuous-wave operation at 20° C. Under operation at a high temperature of 50° C, the lifetime was longer than 1000 h. With the operating current increasing to above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The carrier lifetime was estimated to be 1.8 ns from the pulsed modulation of the LDs.Keywords
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