Photoluminescence characteristics of AlGaN-GaN-AlGaN quantum wells
- 26 March 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (13) , 1257-1259
- https://doi.org/10.1063/1.102530
Abstract
AlxGa1−xN-GaN quantum wells were grown on basal plane sapphire by low-pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses and x values were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical transition were identified.Keywords
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