Strong light-matter coupling at room temperature in simple geometry GaN microcavities grown on silicon
- 5 July 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (2)
- https://doi.org/10.1063/1.1994954
Abstract
The reflectance spectra of simple design GaN-based microcavities have been studied in the 5 K–300 K range. The epitaxial structure consists of the silicon substrate and the stack of buffer layers as the back mirror, a GaN active layer, and a 100 Å thick aluminium layer as the top mirror. Active layer thicknesses of λ∕2, λ, or 3λ∕2 were investigated. The samples with GaN thicknesses λ∕2 and λ display an anticrossing behavior between the cavity and exciton modes, with measured Rabi splittings of 47 and 60 meV, respectively, both at 5 K and room temperature.Keywords
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