Gallium arsenide dual Schottky barrier diodes
- 31 October 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (10) , 1185-1188
- https://doi.org/10.1016/0038-1101(73)90146-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Transit-Time Oscillations in BARITT DiodesJournal of Applied Physics, 1972
- Current transport in metal-semiconductor-metal (MSM) structuresSolid-State Electronics, 1971
- A Low-Noise Metal-Semiconductor-Metal (MSM) Microwave OscillatorBell System Technical Journal, 1971
- Evaluation of a New Polish for Gallium Arsenide Using a Peroxide-Alkaline SolutionJournal of the Electrochemical Society, 1971
- A Proposed High-Frequency, Negative-Resistance DiodeBell System Technical Journal, 1958