Determination of localized-state distributions in amorphous semiconductors from transient photoconductivity
- 4 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (14) , 1830-1832
- https://doi.org/10.1063/1.111769
Abstract
A method has been proposed for the determination of localized‐state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms. The method is valid in both pre‐ and post‐recombination regimes of transient photoconductivity. The applicability of the method is demonstrated in amorphous arsenic triselenide.Keywords
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