Spectroscopic analysis of transient photocurrents in a-As2Se3
- 10 October 1983
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 16 (28) , L1005-L1010
- https://doi.org/10.1088/0022-3719/16/28/004
Abstract
A recently developed spectroscopic method, based on trap-controlled band-transport (TCBT) in semiconductors, is applied to the transient photocurrent in glassy As2Se3. The analysis points to the presence of a local maximum in the density of localised states at some 0.45 eV inside the gap; beyond this maximum, the density decreases exponentially over a range of approximately 0.15 eV. Difficulties concerning the spectroscopic interpretation of transport data are further examined.Keywords
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