Abstract
Monte Carlo simulation of charge-carrier hopping between spatially random sites is extended to systems more dilute than those examined in a previous study (Marshall 1978). It is shown that a rapid equilibration of injected carriers continues to occur in the more dilute systems, so that transit pulses are not of the highly dispersive form frequently encountered in experimental studies of disordered semiconductors. However, the dispersion is found to be anomalous in the sense that it is not determined by the conventional laws of diffusion. By increasing the cross-sectional area of the model specimen by more than an order of magnitude, it is demonstrated that the results of the simulation study do not depend on the finite size of the array of sites investigated.