Permanent Damage Effects in Si and AlGaAs/GaAs Photodiodes
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 29 (6) , 1539-1544
- https://doi.org/10.1109/tns.1982.4336400
Abstract
We report here on a study of permanent damage effects in photodiodes due to total dose exposures of 108 rad (Si) ionizing-radiation from a Co60 source. Specifically, we compare the degradation of optical quantum efficiency and increases in photodiode leakage current in Si PIN structures with specially designed and fabricated, double heterostructure AlGaAs/GaAs photodiodes. Results indicate some degradation in quantum efficiency (20-30%) for both types of devices. Leakage currents were found to increase signficantly after 108 rad in the Si PIN structures but only increase slightly in the AlGaAs/GaAs structures.Keywords
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