Computer Modeling and Radiation Testing of AlGaAs Photodiode Structures
- 1 December 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4341-4345
- https://doi.org/10.1109/tns.1981.4335726
Abstract
A detailed one-dimensional computer model has been used to identify the device characteristics which determine the undesirable current induced in various AlGaAs photodiode structures by ionizing radiation. The calculations were performed to aid in the design of AlGaAs photodiode structures operating at λ=.82μm with optimized radiation insensitivities. Various AlGaAs photodiode structures have been grown and experimentally characterized to test the model. Good agreement between calculated and measured characteristics have been obtained, indicating that the model provides a good description of the factors affecting the radiation sensitivity and the optical response of AlGaAs photodiodes.Keywords
This publication has 4 references indexed in Scilit:
- Computer Modeling of Radiation Hard AlGaAs Heterojunction Photodiode StructuresIEEE Transactions on Nuclear Science, 1981
- Transient Effects of Ionizing Radiation in PhotodiodesIEEE Transactions on Nuclear Science, 1981
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