Effect of EB Acceleration Voltage and Beam Sharpness on Process Latitude of 0.2 µm Lines

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Abstract
The 0.2µm line delineation capability of electron beam direct-writing is estimated by computer simulation. The effects of acceleration voltage and beam sharpness are evaluated by looking at process latitudes. The process latitudes refer to dose and development time latitudes, where proper resist profiles are obtained. The process latitudes are compared for acceleration voltages of 30 and 50 keV; and beam blurs of 0.0, 0.05, and 0.1 µm. For patterning on a bare Si substrate, an acceleration voltage higher than 30 keV with beam blur less than 0.1 µm can fabrlcate 0.2 µm lines. However, a 50 keV acceleration voltage is required for patterning on a W layer, because 30 kev, even with 0.0 µm beam blur, has only a small dose latitude.

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