Comparison of dopant incorporation into polycrystalline and monocrystalline silicon
- 1 September 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (5) , 410-412
- https://doi.org/10.1063/1.91143
Abstract
The capacitance‐voltage (C‐V) technique was used to compare the dopant distribution in polycrystalline silicon to that in monocrystalline silicon grown under the same conditions via chemical vapor deposition. Over a doping range extending from approximately 1015 to 1019 cm−3, the polycrystalline and monocrystalline material yielded identical results. These results, in conjunction with those of other investigations, indicate that the concentration and uniformity of dopant in both n‐ and p‐type polycrystalline silicon match those in monocrystalline silicon.Keywords
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