The role of reflectivity change in optically induced recrystallization of thin silicon films
- 15 January 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (2) , 454-458
- https://doi.org/10.1063/1.336652
Abstract
In this paper we study a simplified model of the fundamental mechanisms governing the radiatively induced recrystallization of a thin polysilicon layer on a heat-sink structure. It has been observed that instabilities in laser induced crystal growth on thin polysilicon layers do occur. To study these solidification instabilities we use a linear stability analysis. The reflectivity difference between the liquid and the solid phases is shown to be a source of thermal instability.This publication has 9 references indexed in Scilit:
- Instability in radiatively melted silicon filmsJournal of Crystal Growth, 1985
- Aligned, coexisting liquid and solid regions in laser-annealed SiPhysical Review B, 1983
- Microscopy of Si films during laser meltingApplied Physics Letters, 1982
- Laser-Induced Melt Dynamics of Si and SilicaPhysical Review Letters, 1981
- Temperature dependence of the reflectance of solid and liquid siliconJournal of Applied Physics, 1981
- Determination of interface state density and capture cross section by a hysteresis pulsed C-V methodSolid-State Electronics, 1981
- Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAsJournal of Applied Physics, 1980
- Interface conditions in heat-conduction problems with change of phase.AIAA Journal, 1968
- Stability of a Planar Interface During Solidification of a Dilute Binary AlloyJournal of Applied Physics, 1964