Determination of interface state density and capture cross section by a hysteresis pulsed C-V method
- 31 January 1981
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 24 (1) , 87-89
- https://doi.org/10.1016/0038-1101(81)90217-3
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Energy-resolved DLTS measurement of interface states in MIS structuresApplied Physics Letters, 1979
- A determination of interface state energy during the capture of electrons and holes using DLTSIEEE Transactions on Electron Devices, 1979
- Graphical Technique to Determine the Density of Surface States at the Si-SiO[sub 2] Interface of MOS Devices Using the Quasistatic C-V MethodJournal of the Electrochemical Society, 1973
- Silicon Impurity Distribution as Revealed by Pulsed MOS C-V MeasurementsJournal of the Electrochemical Society, 1971
- Transient responses of a pulsed MIS-capacitorSolid-State Electronics, 1970