The effect of excess gallium vacancies in low-temperature GaAs/AlAs/GaAs:Si heterostructures
- 1 July 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 80 (1) , 156-160
- https://doi.org/10.1063/1.362742
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
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