Density of states for cleaved Si (111) fromandAuger spectra
- 15 December 1980
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 22 (12) , 6302-6307
- https://doi.org/10.1103/physrevb.22.6302
Abstract
The and Auger spectra obtained from vacuum-cleaved Si (111) surfaces have been debroadened and deconvoluted to obtain the occupied (surface) density of states (DOS) functions. Good agreement with theory is found for both transitions. In particular, the surface dangling bond state has been determined from Auger data for the first time. While the derived curve approximates closely to the DOS, the derived one shows suppression of the and peaks, and can be interpreted only in terms of a partial DOS.
Keywords
This publication has 31 references indexed in Scilit:
- Measurement of valence band Auger spectra for GaAs(110) from Ga and As CCV transitions.Journal of Vacuum Science and Technology, 1978
- Auger-Electron Spectroscopy as a Local Probe of Atomic Charge: SiPhysical Review Letters, 1978
- Theory of Auger line shapes in chemisorption of Cl on Si(111)Physical Review B, 1978
- Valence-band Auger line shapes for Si surfaces: Simplified theory and corrected numerical resultsPhysical Review B, 1978
- Valence−band structure in the Auger spectrum of aluminumJournal of Vacuum Science and Technology, 1975
- Dynamic background subtraction and the retrieval of threshold signalsReview of Scientific Instruments, 1974
- Surface and Bulk Contributions to Ultraviolet Photoemission Spectra of SiliconPhysical Review Letters, 1974
- Retrieval of electron-excited Auger structure by dynamic background subtractionApplied Physics Letters, 1974
- The Interrelation of Physics and Mathematics in Ion-Neutralization SpectroscopyPhysical Review B, 1971
- Self-Consistent Orthogonalized-Plane-Wave Energy-Band Study of SiliconPhysical Review B, 1970