Optimization of growth parameters for direct band gap SiGe superlattices

This publication has 13 references indexed in Scilit:

• Intersubband optical transitions in Si-Si0.5Ge0.5 superlattices
  Applied Physics Letters, 1989
• Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
  Physical Review B, 1988
• Effect of buffer-layer composition on new optical transitions in Si/Ge short-period superlattices
  Physical Review B, 1988
• Electronic Structure and Optical Properties of Si-Ge Superlattices
  Physical Review Letters, 1988
• Electronic structure of strained Sin/Gen(001) superlattices
  Solid State Communications, 1988
• Strained layer SiSiGe superlattices
  Superlattices and Microstructures, 1987
• Strain-induced confinement in ${\mathrm{Si}}_{0.75}$${\mathrm{Ge}}_{0.25}$ (Si/${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$) (001) superlattice systems
  Physical Review B, 1987
• Structurally induced optical transitions in Ge-Si superlattices
  Physical Review Letters, 1987
• Ge-Si layered structures: Artificial crystals and complex cell ordered superlattices
  Applied Physics Letters, 1986
• Theory of direct optical transitions in an optical indirect semiconductor with a superlattice structure
  Applied Physics A, 1974