Comparison and extension of recent one-dimensional bipolar transistor models
- 1 July 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 35 (7) , 1096-1106
- https://doi.org/10.1109/16.3369
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Non-quasi-static small-signal models for semiconductor junction diodes with extensions for transistorsSolid-State Electronics, 1987
- The transient integral charge control relation—A novel formulation of the currents in a bipolar transistorIEEE Transactions on Electron Devices, 1987
- Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulationIEEE Electron Device Letters, 1986
- Limitations of quasi-static capacitance models for the MOS transistorIEEE Electron Device Letters, 1983
- Extended charge-control model for bipolar transistorsIEEE Transactions on Electron Devices, 1973
- The equivalent circuit model in solid-state electronics—IIISolid-State Electronics, 1970
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970
- A Charge Control Relation for Bipolar TransistorsBell System Technical Journal, 1970