Electron-Phonon Scattering in Si-Doped GaN
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Activation energies of Si donors in GaNApplied Physics Letters, 1996
- Carrier localization of as-grownn-type gallium nitride under large hydrostatic pressurePhysical Review B, 1996
- Characterization of the Shallow and Deep Levels in Si Doped GaN Grown by Metal-Organic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1994
- Raman scattering from LO phonon-plasmon coupled modes in gallium nitrideJournal of Applied Physics, 1994
- Doping of GaN with Si and properties of blue m/i/n/n+ GaN LED with Si-doped n+-layer by MOVPEJournal of Crystal Growth, 1991
- Dielectric parameterization of raman lineshapes for GaP with a plasma of charge carriersApplied Physics A, 1973
- First-Order Raman Effect in Wurtzite-Type CrystalsPhysical Review B, 1969