Hetero-nipi band filling modulator with laterally interdigital contacts made by shadow mask molecular beam epitaxy regrowth
- 11 January 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (2) , 152-153
- https://doi.org/10.1063/1.109600
Abstract
An AlGaAs/GaAs optical hetero‐nipi modulator based on band filling effect with interdigital selective contacts has been fabricated by use of shadow mask molecular beam epitaxy (MBE) regrowth technique. There is a five order of magnitude change in I‐V characteristics from forward to reverse junction bias, which indicates the high quality of the interdigital contacts. The measured reflectance spectra show a change of the absorption coefficient of about 7850 cm−1 with an applied bias voltage as low as 1.5 V.Keywords
This publication has 2 references indexed in Scilit:
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