Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built-in shadow mask
- 14 September 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (11) , 831-833
- https://doi.org/10.1063/1.98827
Abstract
Micron width doping superlattices or n-i-p-i structures with grown-in interdigital highly selective contacts are grown successfully in a channeled GaAs substrate by molecular beam epitaxy (MBE) through a built-in shadow mask. Excellent diode characteristics and efficient lateral injection electroluminescence demonstrate the high quality of the masked MBE growth in the channeled substrate.Keywords
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