Growth of GaAs-Ga1−xAlxAs over preferentially etched channels by molecular beam epitaxy: A technique for two-dimensional thin-film definition
- 15 March 1977
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 30 (6) , 293-296
- https://doi.org/10.1063/1.89373
Abstract
In this paper, studies of the molecular beam epitaxy (MBE) of GaAs‐Ga1−xAlxAs multilayer structures over preferentially etched channels on GaAs substrates are described. It is found that the growth characteristics with MBE are entirely different from those obtained from similar experiments when LPE is used. Results obtained indicate that this etch‐and‐fill technique using MBE as the growth process should be particularly useful in fabricating injection lasers, laser arrays, and integrated optics components which require planar definition.Keywords
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