On the development of poly gate n-MOS technology
- 1 January 1985
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 25 (3) , 437-445
- https://doi.org/10.1016/0026-2714(85)90193-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Direct moat isolation for VLSIIEEE Transactions on Electron Devices, 1982
- Room temperature negative bias instability in silicon dioxide films grown in the presence of O2-trichloroethyleneThin Solid Films, 1980