Microwave Hall measurment techniques on low mobility semiconductors and insulators. I. Analysis
- 1 August 1975
- journal article
- research article
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 46 (8) , 1074-1079
- https://doi.org/10.1063/1.1134404
Abstract
The relationships of microwave Hall mobilities and microwave conductivities in a semiconductor, placed at the center of a dual mode TE111 cavity, are expressed in terms of the loaded and unloaded voltage reflection coefficients, the sample and the cavity dimensions, the ratio of the output power to the input power of the cavity, and the magnetic field. ScatteringKeywords
This publication has 17 references indexed in Scilit:
- Hopping conduction in gallium sulphide single crystalsJournal of Physics C: Solid State Physics, 1971
- Electrical transport properties of single crystal nickel oxideJournal of Physics and Chemistry of Solids, 1968
- On a Method for Measurement of Microwave Hall Mobility of Semiconductors†International Journal of Electronics, 1965
- Hall Effect in N- and P-type Germanium at 24 GcJournal of the Physics Society Japan, 1961
- Microwave Measurement of Mobility: Analysis of ApparatusReview of Scientific Instruments, 1961
- Low-Frequency Conductivity Due to Hopping Processes in SiliconPhysical Review B, 1961
- Microwave Hall effect in germanium and silicon at 20 kmc/sJournal of Physics and Chemistry of Solids, 1959
- Measurement of the Hall Mobility in n-Type Germanium at 9121 MegacyclesJournal of Applied Physics, 1958
- Faraday Effect in Germanium at Room TemperaturePhysical Review B, 1955
- Hall and Kerr Effects at Microwave FrequenciesPhysical Review B, 1948