Low energy kinetic threshold in the growth of cubic boron nitride films
- 4 April 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (14) , 1859-1861
- https://doi.org/10.1063/1.111779
Abstract
We report the growth of cubic boron nitride (cBN) films by magnetron sputtering on Si (100) substrates. The films are grown in the presence of negative substrate bias voltages and a nitrogen plasma produced by an electron cyclotron resonance source. We find evidence for a sharp low-voltage threshold in the substrate bias (−105 V) beyond which the samples are predominantly cBN. The structural quality of the cBN films is optimized in a narrow range of voltages near this threshold. We discuss the important role of energetic ions in the formation of cBN in light of recent theoretical findings.Keywords
This publication has 12 references indexed in Scilit:
- Phase evolution in boron nitride thin filmsJournal of Materials Research, 1993
- Plasma depostion of BN, BCN:H and Me-BCN:H films using N-trimethylborazine (Me = Ti, Nb)Journal de Physique III, 1992
- Ion-assisted pulsed laser deposition of cubic BN films on Si (001) substratesJournal of Materials Research, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Deposition of cubic boron nitride thin films by ion-beam-enhanced depositionDiamond and Related Materials, 1992
- Formation of cBN films by ion beam assisted depositionJournal of Vacuum Science & Technology A, 1992
- Preparation of cubic boron nitride films by radio frequency bias sputteringSurface and Coatings Technology, 1992
- III-V nitrides for electronic and optoelectronic applicationsProceedings of the IEEE, 1991
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- Cubic Form of Boron NitrideThe Journal of Chemical Physics, 1957