Semiclassical high-field transport equations for nonparabolic heterostructure degenerate semiconductors

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Abstract
High‐field transport equations are derived for heterostructure degenerate semiconductors, with the inclusion of first‐order nonparabolicity in the energy band structure for diamond and zinc‐blende semiconductors. The model is based on the first four moments of the relaxation time approximation Boltzmann transport equation. Cubic symmetry has been assumed, although field orientation effects may be included in the relaxation time function. The model is valid up to a hot carrier energy condition satisfying 2αW<1. The low‐field limits of the model are also examined.