An analytical model for back-gate effects on ultrathin-film SOI MOSFET's
- 1 August 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (8) , 433-435
- https://doi.org/10.1109/55.119156
Abstract
An analytical model including the semiconducting substrate effect for silicon-on-insulator (SOI) MOSFET threshold and subthreshold operation is presented. The potential drop across the substrate tends to reduce the front-gate threshold voltage as well as subthreshold swing. However, if the substrate or the back-gate surface is accumulated, the substrate effects can be neglected. Five comprehensive operation regions under various bias conditions are distinguished and discussed for the first time.Keywords
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