An analytical model for the MISIS structure in SOI MOS devices
- 31 March 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (3) , 357-364
- https://doi.org/10.1016/0038-1101(90)90201-o
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Thin-film SOI devices: A perspectiveMicroelectronic Engineering, 1988
- Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuitsMicroelectronic Engineering, 1988
- A new analytical model for the two-terminal MOS capacitor on SOI substrateIEEE Electron Device Letters, 1988