Material and device technologies for advanced, high-performance, and radiation-hardened CMOS circuits
- 1 August 1988
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 8 (1-2) , 79-91
- https://doi.org/10.1016/0167-9317(88)90008-1
Abstract
No abstract availableKeywords
This publication has 47 references indexed in Scilit:
- CMOS — The emerging VLSI technologyIEEE Circuits and Devices Magazine, 1986
- A perspective on CMOS technology trendsProceedings of the IEEE, 1986
- A comparison of fine-dimension silicon-on-sapphire and bulk-silicon complementary MOS devices and circuitsIEEE Transactions on Electron Devices, 1985
- A subnanosecond 8K-gate CMOS/SOS gate arrayIEEE Journal of Solid-State Circuits, 1984
- MOS technology for VLSIMicroelectronics Reliability, 1984
- A high speed and low power CMOS/SOS multiplier-accumulatorMicroelectronics Journal, 1983
- A high-performance CMOS/SOS device with a gradually doped source—Drain extension structureIEEE Electron Device Letters, 1983
- Characterization of CMOS devices for VLSIIEEE Transactions on Electron Devices, 1982
- SOS/CMOS as a high-performance LSI deviceIEEE Transactions on Electron Devices, 1982
- Comparison of new technologies for VLSI: Possibilities and limitationsMicroelectronics Journal, 1981