Comparison of new technologies for VLSI: Possibilities and limitations

This publication has 8 references indexed in Scilit:

• Film properties of MoSi₂and their application to self-aligned MoSi₂gate MOSFET
  IEEE Transactions on Electron Devices, 1980
• Quadruply self-aligned MOS (QSA MOS)—A new short-channel high-speed high-density MOSFET for VLSI
  IEEE Transactions on Electron Devices, 1980
• Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
  IEEE Transactions on Electron Devices, 1980
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_1-xAs Heterojunctions
  Japanese Journal of Applied Physics, 1980
• LASOS—laser annealed silicon on sapphire
  IEEE Transactions on Electron Devices, 1980
• Crystallographic orientation of silicon on an amorphous substrate using an artificial surface-relief grating and laser crystallization
  Applied Physics Letters, 1979
• Device down scaling and expected circuit performance
  IEEE Journal of Solid-State Circuits, 1979
• Design of ion-implanted MOSFET's with very small physical dimensions
  IEEE Journal of Solid-State Circuits, 1974