Changes in the opto-electronic properties of CuInSe2 following ion implantation
- 1 September 1991
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 20 (9) , 659-663
- https://doi.org/10.1007/bf02654535
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Defect chemical explanation for the effect of air anneal on CdS/CuInSe2 solar cell performanceApplied Physics Letters, 1989
- The observation of near-surface deviations from stoichiometry in CuInSe2 crystals following chemical etchingSolid State Communications, 1988
- The role of oxygen in CuInSe2 thin films and CdS/CuInSe2 devicesSolar Cells, 1986
- X-ray photoelectron and Auger electron spectroscopic analysis of surface treatments and electrochemical decomposition of CuInSe2 photoelectrodesJournal of Applied Physics, 1985
- Electronic properties versus composition of thin films of CuInSe2Applied Physics Letters, 1984
- High resistivity in InP by helium bombardmentJournal of Applied Physics, 1984
- Influence of intrinsic defects on the electrical properties of AIBIIIC compoundsCrystal Research and Technology, 1983
- Optical properties of amorphous CuInSe2Solid State Communications, 1982
- Optical and electrical properties of proton-bombarded p-type GaAsJournal of Applied Physics, 1973