High resistivity in InP by helium bombardment
- 15 May 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3859-3862
- https://doi.org/10.1063/1.332897
Abstract
Helium implants over a fluence range from 1011 to 1016 ions/cm2, reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 109 Ω cm for p-type InP and of 103 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling.This publication has 5 references indexed in Scilit:
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