Copper-doped radiation-resistant n/p-type silicon solar cells
- 1 August 1970
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (8) , 1202-1204
- https://doi.org/10.1016/0038-1101(70)90132-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Theoretical investigation of the efficiency of drift-field solar cellsIEEE Transactions on Electron Devices, 1969
- Role of Lithium in Damage and Recovery of Irradiated Silicon Solar CellsIEEE Transactions on Nuclear Science, 1967
- An experimental study of drift-field silicon solar cellsIEEE Transactions on Electron Devices, 1967
- Electrical Properties of Oxidized Si P-N JunctionsJapanese Journal of Applied Physics, 1964
- Effects of Dosage and Impurities on Radiation Damage of Carrier Life Time in SiJournal of the Physics Society Japan, 1964
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964