Effects of Dosage and Impurities on Radiation Damage of Carrier Life Time in Si
- 1 June 1964
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 19 (6) , 851-858
- https://doi.org/10.1143/jpsj.19.851
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Hall Effect Measurement of Radiation Damage and Annealing in SiJournal of the Physics Society Japan, 1964
- Annealing of Radiation Damage on Life-Time in Silicon Containing Copper and IronJournal of the Physics Society Japan, 1963
- Radiation-Induced Recombination and Trapping Centers in Germanium. I. The Nature of the Recombination ProcessPhysical Review B, 1961
- Thermal Conversion of Germanium†Journal of Electronics and Control, 1961
- Microwave Techniques in Measurement of Lifetime in GermaniumJournal of Applied Physics, 1959
- Transient Recombination of Excess Carriers in SemiconductorsPhysical Review B, 1958
- Recombination of Excess Carriers in SemiconductorsJournal of the Physics Society Japan, 1957
- Energy Levels in Electron-Bombarded SiliconPhysical Review B, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952