Microwave Techniques in Measurement of Lifetime in Germanium
- 1 July 1959
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 30 (7) , 1054-1060
- https://doi.org/10.1063/1.1776978
Abstract
New techniques are proposed for the measurement of lifetime in semiconductors by utilizing the absorption of microwave power by charge carriers. The densities of holes and electrons are varied by irradiation with light or the conduction mechanism. Agreement is found when the microwave absorption methods are compared with the more established photoconductivity decay techniques. One of the new methods offers an advantage in that electrode attachments are no longer required.This publication has 4 references indexed in Scilit:
- Lifetime in-Type SiliconPhysical Review B, 1958
- Lifetime of Electrons in-Type SiliconPhysical Review B, 1955
- Measurement of Carrier Lifetimes in Germanium and SiliconJournal of Applied Physics, 1955
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952