Incorporation probabilities and depth distributions of aluminum co-evaporated during Si(100) molecular beam epitaxy
- 1 January 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 184 (1-2) , 61-67
- https://doi.org/10.1016/0040-6090(90)90398-w
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxyJournal of Applied Physics, 1989
- Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxyJournal of Applied Physics, 1989
- Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxyApplied Physics Letters, 1988
- A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregationSurface Science, 1985
- Silicon molecular beam epitaxyThin Solid Films, 1983
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- Silicon Cleaning with Hydrogen Peroxide Solutions: A High Energy Electron Diffraction and Auger Electron Spectroscopy StudyJournal of the Electrochemical Society, 1972