Incorporation of accelerated low-energy (50–500 eV) In+ ions in Si(100) films during growth by molecular-beam epitaxy
- 1 January 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (1) , 172-179
- https://doi.org/10.1063/1.342565
Abstract
A single-grid broad-beam ion source was used for low-energy (50–500 eV) accelerated In+ ion beam doping during growth of Si(100) layers by molecular-beam epitaxy. Indium incorporation behavior was studied as a function of ion energy (E+In=50–500 eV), substrate temperature (Ts=500–1050 °C), ion flux (J+In=1×109–5×1012 cm−2 s−1), and Si growth rate (R=0.1–1.3 nm s−1). Dopant concentration profiles obtained using secondary ion mass spectroscopy showed that abrupt doping profiles were obtained at Ts<900 °C and R=0.7 μm h−1, the incorporation probability σ+In was close to unity for E+In≥200 eV, while σ+In was less than unity and decreased gradually with increasing Ts for E+In≤100 eV. At Ts≥900 °C, σ+In decreased rapidly with increasing Ts for all ion energies. The incorporation results are interpreted using a qualitative model based on different types of binding sites for In with incident energies ranging from thermal to 500 eV. A procedure, utilizing accelerated ions, for the growth of ultrathin doped layers is also suggested.This publication has 21 references indexed in Scilit:
- Silicon molecular beam epitaxy: Use of a microion source for doping by low-energy implantationJournal of Vacuum Science & Technology B, 1987
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985
- Si molecular beam Epitaxy: A model for temperature dependent incorporation probabilities and depth distributions of dopants exhibiting strong surface segregationSurface Science, 1985
- Indium incorporation during the growth of (100)Si by molecular beam epitaxy: Surface segregation and reconstructionApplied Physics Letters, 1984
- Evaporative antimony doping of silicon during molecular beam epitaxial growthJournal of Applied Physics, 1984
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Silicon molecular beam epitaxy with antimony ion dopingJournal of Applied Physics, 1980
- Silicon molecular beam epitaxy with simultaneous ion implant dopingJournal of Applied Physics, 1980
- n‐Type Doping Techniques in Silicon Molecular Beam Epitaxy by Simultaneous Arsenic Ion Implantation and by Antimony EvaporationJournal of the Electrochemical Society, 1979