Silicon molecular beam epitaxy with simultaneous ion implant doping
- 1 February 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (2) , 1102-1110
- https://doi.org/10.1063/1.327717
Abstract
Silicon epitaxial layers have been made with virtually any doping profile by combining molecular beam epitaxial growth with simultaneous ion implant doping. Arsenic ions (As+) accelerated to energies between 400 and 800 eV have shown a high sticking coefficient on the heated silicon surface. Growth conditions have been defined at which epitaxial films with bulk characteristics are obtained.This publication has 6 references indexed in Scilit:
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